electrical tester hs code

Bus interface circuit of C-MOS technology, for the management of I/O data flow in signal lines, with 4|independent transceivers, a circuit with 4|!x!|2 input NAND gates, a circuit with 4|!x!|2|-|input AND gates, a separator circuit, a flip-flop circuit, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 31|!x!|31|mm, with not more than 84|connecting pins and bearing:!1!- an identification marking consisting of or including the following combination of figures and letters:!1!FE|3030!1!or!1!- other identification markings relating to devices complying with the abovementioned description!1!2. - an identification marking consisting of or including one of the following combinations of figures and letters:!1! - an identification marking consisting of or including one of the following combinations of figures or figures and letters :!1! Control circuit of C-MOS technology for dynamic random-access read/write memories (D-RAMs), with an address buffer for upper address-bits, a memory decoder and a speaker controller, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed|31|!x!|31|mm, with not more than|84|connecting pins and bearing :!1!- an identification marking consisting of or including the following combination of figures and letters :!1!82|C|102!1!or!1!- other identification markings relating to devices complying with the abovementioned description, 1. or!1!- other identification markings relating to devices complying with the abovementioned description, Metal oxide semiconductors (MOS technology), Wafer, not yet cut into chips, only for use in the manufacture of goods of subheading 8542|13|22 to 8542|13|61, 8542|13|70, 8542|13|82 or 8542|13|84, Wafer, not yet cut into chips, consisting only of control or drive circuits, for use in the manufacture of liquid crystal devices (LCD) modules, Monolithic integrated circuit not contained in a housing (chip), only for use in the manufacture of goods of subheading 8542|13|22 to 8542|13|61, 8542|13|70, 8542|13|82 or 8542|13|84, With a storage capacity not exceeding 4 Mbits, With a storage capacity exceeding 4 Mbits but not exceeding 16 MbitS, With a storage capacity exceeding 16 Mbits but not exceeding 64 Mbits, With a storage capacity exceeding 64 Mbits, With a storage capacity not exceeding 256 Kbits, With a storage capacity exceeding 256 Kbits but not exceeding 1 Mbit, With a storage capacity not exceeding 1 Mbit, With a storage capacity exceeding 1 Mbit but not exceeding 4 Mbits, With a storage capacity exceeding 4 Mbits, With a storage capacity exceeding 4 Mbits but not exceeding 16 Mbits, With a storage capacity exceeding 16 Mbits but not exceeding 32 Mbits, With a storage capacity exceeding 16 Mbits, With a storage capacity exceeding 32 Mbits, Read only memories, non-programmable (ROMs); content addressable memories (CAMs); first-in/first-out read/write memories (FIFOs); last-in/first-out read/write memories (LIFOs); ferroelectric memories, Microcontroller or microcomputer with a processing capacity not exceeding 4 bits, Microcontroller or microcomputer of C-MOS technology, with a processing capacity of 8 bits, having a register-to-register architecture, comprising a static random-access memory (S-RAM) with a storage capacity of not more than 12 Kbits and at least a read only memory, non-programmable (ROM) or a programmable, non-erasable, read only memory (PROM) or an UV-erasable, programmable, read only memory (EPROM) or an electrically erasable, programmable, read only memory (E$2PROM), with a storage capacity of not more than 256 Kbits, in the form of a monolithic integrated circuit contained in a housing bearing:- an identification marking consisting of or including (one of) the following combination(s):370C010 370C032 370C050 370C052 370C056 370C058 370C150 370C156 370C250 370C256 370C310 370C332 370C350 370C352 370C356 370C358 370C732 370C756 370C758 370C810 370C850 374C036 73C41 73C42 73C85 73C88 73C95 73C161 MC|68HC05P1 MC|68HC05P8 or- other identification markings relating to devices complying with the abovementioned description, Microcontroller or microcomputer, with a processing capacity of 8 bits, comprising one or more data memories with a total storage capacity not exceeding 24 Kbits and one or more programme memories with a total storage capacity of 32 Kbits or more, in the form of a monolithic integrated circuit contained in a housing bearing:- an identification marking consisting of or including (one of) the following combination(s):5A41 5B11 76C75T 7742 77C82 80C152 80C51 80C52 83C055 83C504 83C51 83L51 8751 87C055 87C504 87C51 87C52 87C54 87C58 87L51 Am|79C412 AT|89C51 C|1900 C|2900 C|3900 C|40 CXD|80724 CXP|80524 L|39 M|37450E8 M|37450M8 M|38063M6 M|38063E8 M|38067M8 M|3812 M50743 M50747 M50958 M50959 MC68HC05i8 MC68HC11A8 MC68HC705i8 MN|1871215 P|39 PCA|84C640 PCA|84C840 PCA|84C841 PD|78014 PD|78058 PD|78064 PD|78098 PD|78134 TMP|87PM70 TMP|91P642 or- other identification markings relating to devices complying with the abovementioned description, With a processing capacity exceeding 8 bits but not exceeding 16 bits, With a processing capacity exceeding 16 bits but not exceeding 32 bits, With a processing capacity exceeding 32 bits, Video controller, with at least one of the following functions:- a) cathode-ray tube controlling,- b) liquid crystal display (LCD) driving or controlling,- c) graphics or graphic symbols controlling,- d) colour selection controlling,in the form of a monolithic integrated circuit, either contained in a housing or fixed on a plastic support, and bearing:-an identification marking consisting of or including one of the following combinations of figures and letters:a) 82 C 434 b) HD 44100 b) TMS 57212a) 82 C 453 b) HD 44780 b) TMS 57213a) 86 C 805 b) HD 66100 b) V 6117a) 86 C 911 b) HD 61104T b) V 6335-DJa) 86 C 928 b) HD 61105T b) WD 90C24a) AM 8052 b) HD 66106T c) ATI 264CTa) ATI 68800 b) HD 66107T c) GD 5430 a) CL-GD542 b) LC 7582 c) SC 15064a) CL-GD543 b) M 6003 c) 82 C 431a) CRT 9007 b) M 6004 c) 82 C 435a) CRT 97 C 11 b) MSM 5259 c) 82 C 441a) TVP 9512 b) MSM 5298 c) 82 C 451 a) M 50452 b) MSM 5299 c) 82 C 452a) MB 89321 b) MSM 5839 c) 84 C 451a) MB 89322 b) PCF 8576 c) AVGA1a) V 6363 b) SED 1520 c) CL-GD5410a) WD 90 C 10 b) SED 1521 c) HT 208a) WD 90 C 11 b) SED 1600 c) HT 209a) WD 90 C 30 b) SED 1610 c) L 64845a) WD 90 C 31 b) T 6A39 c) NCR 77C22a) WD 90 C 33 b) T 6A40 c) OTI 067b) 82 C 425 b) TMS 3491 c) PEGAa) CL-GD6410 b) TMS 3492 c) PVGAb) COP 472 b) TMS 57202 c) WD 90 C 00b) H 5050 b) TMS 57206 c) 86 C 864 b) TMS 57207 c) 86 C 964 b) TMS 57210 c) LC 74780 d) 82 C 433or - other identification markings relating to devices complying with the abovementioned description, Bus interface circuit, whether or not with bus control functions, in the form of a monolithic integrated circuit, contained in a housing bearing:-an identification marking consisting of or including one of the following combinations of figures or of figures and letters:53 C 700 53 C 710 53 C 720 82335 82351 82352 82353 82365SL 82C100 82C30082C836 89C100 89C105 AIC 6250 AIC 7770CL PD6710 CL PD6720 CY7C964 ESP 216 ESP 226FAS 216 FAS 226 FAS 236 FE 3030 GC 132GC 133 HS 3282 L 64853A NCR 5380 NCR 5381NCR 53|C 80 NCR 53 C 90 PBI TACT 84544 TMS 38030WD 33 C 92 WD 33 C 93 94G0207 CY7C960 ES 68882378IB 82423TX 82433LX LIA 6396 LIA 6732WD 33 C 95 WD 33 C 96 WD 76 C 10 Z 86017 82375EB03H6300 82C596 82C611 MB 86980 PCF 8574 CY7C961 HDL-33A112-00HQAm 29C983 VY 06765 Z 16C32Am 29C985 VY 06925or- other identification markings relating to devices complying with the abovementioned description, Signal processor in the form of an integrated circuit in MOS technology capable of processing and correctiong (including game-correction, contour-correction, flare-correction and leaking-pixel-correction) digital (video) images of television cameras, Control circuits; interface circuits; interface circuits capable of performing control functions, Digital-to-analogue converter of C-MOS technology, with at least one of the following characteristics:- a) with a capacity of 8 bits, with an output buffer amplifier, a serial interface circuit and at least 12 channels,- b) with a capacity of 8 bits, capable of double buffering 8-bit words,- c) with a capacity of 8 bits, capable of converting serial data input towards 6 or 36 output channels,- d) single or triple converter, with at least one random-access memory (RAMDAC), having one or more colour palette registers,- e) with a dynamic audio range of 90 dB or more,- f) 8-, 9- or 10-bit video converter, with at least 3 channels for the separate conversion of colour signals,- g) with a capacity of 16 bits, capable of converting data in floating point form, comprising a 10-bit digital-to-analogue converter, and a shift register,in the form of a monolithic integrated circuit contained in a housing bearing:- an identification marking consisting of or including (one of) the following combination(s):a)|M|62352P b)|DAC|0830 b)|DAC|0831 b)|DAC|0832 c)|M|62354FP c)|MB|88344B d)|357S0010 d)|357S0011 d)|357S0012 d)|ATT|20C490 d)|ATT|20C491 d)|ATT|20C492d)|ATT|20C493 d)|ATT|20C497 d)|Bt445 d)|Bt451 d)|Bt458 d)|Bt459 d)|Bt460 d)|Bt461 d)|Bt462 d)|Bt463 d)|Bt467 d)|Bt473 d)|Bt475 d)|MU|9C9760 d)|SC|11482 d)|SC|11483 d)|SC|11484 d)|SC|11485 d)|SC|11487 d)|SC|11489 d)|SC|15025 d)|SC|15026 d)|TR|9C1710 d)|TVP|3020 d)|TVP|3030 e)|CS|4328 e)|CXD|2564 e)|PD|6376 e)|TMS|57010 f)|Bt|857 f)|CXD|1178 f)|CXD|2307R f)|CXD|2309 g)|YAC|512 g)|YAC|513 or- other identification markings relating to devices complying with the abovementioned description, Analogue-to-digital converter, with at least one of the following characteristics:- a) 8-bit parallel converter of C-MOS technology,- b) with a capacity of 16 or 20 bits of C-MOS technology, comprising a synchronisation circuit, 2 modulators, 2 digital filters, a 4-bit digital-to-analogue converter and an amplifier,- c) 16-, 18- or 20-bit stereo audio converter of C-MOS technology,- d) with a capacity of 16 bits, comprising a digital filter with a passband of 45,5 kHz at 3 dB,- e) capable of driving a liquid crystal (LCD) or light emitting diode (LED) display with not more 4 digits,- f) 8-bit video converter of C-MOS technology, comprising a synchronising clamp circuit,in the form of a monolithic integrated circuit contained in a housing bearing:- an identification marking consisting of or including (one of) the following combination(s):a)|IDT|75C48 a)|IDT|75C58 a)|MP|7683 a)|MP|7684 b)|CS|5516 b)|CS|5520 c)|CS|5326 c)|CS|5327 c)|CS|5328 c)|CS|5329 c)|CS|5336 c)|CS|5339 c)|CS|5349 d)|DSP|56ADC16 e)|HI|7131 e)|HI|7133 e)|ICL|7106 e)|ICL|7107 e)|ICL|7116 e)|ICL|7117 e)|ICL|7126 e)|ICL|7136 e)|ICL|7137 e)|MAX|130 e)|MAX|131 e)|MAX|133 e)|MAX|138 e)|MAX|139 e)|MAX|140 e)|MAX|136 f)|CXD|1176 f)|CXD|2300 or- other identification markings relating to devices complying with the abovementioned description, Wafer, not yet cut into chips, only for use in the manufacture of goods of subheading 8542|14|15 to 8542|14|42, 8542|14|50, 8542|14|75 or 8542|14|80, Monolithic integrated circuit not contained in a housing (chip), only for use in the manufacture of goods of subheading 8542|14|15 to 8542|14|42, 8542|14|50, 8542|14|75 or 8542|14|80, UV erasable, programmable, read only memories (Eproms), Programmable, non-erasable, read only memory (PROM) of bipolar technology, with a storage capacity not exceeding 64 KBits, in the form of a monolithic integrated circuit contained in a housing bearing :- an identification marking consisting of or including one of the following combinations of figures or figures and letters :18 S 030 27 S 191 5309 6336 82 S 13024 S 10 27 S 291 53 S 240 63 S 240 82 S 13124 S 41 28 L 22 53 S 241 63 S 241 9343624 S 81 28 LA 22 54 S 570 63 S 3281 9344628 L 42 28 L2XMFC 54 S 571 7053 Am 27S4328 S 166 29613 5604 7058 MB 711528 S 42 29770 5624 74 S 570 MB 711628 S 86 29771 6305 74 S 571 MB 711727 PS 191 38510 6306 76 LS 03 MB 711827 PS 291 5305 6308 7620 MB 714127 S 12 5306 6309 7621 MB 714227 S 13 5308 6335 82 S 114or- other identification markings relating to devices complying with the abovementioned description, With a processing capacity exceeding 4 bits, Other, including circuits obtained by a combination of bipolar and MOS technologies (BIMOS technolgy), Wafer, not yet cut into chips, only for use in the manufacture of goods of subheading 8542|19|22 to 8542|19|62, 8542|19|71, 8542|19|82 or 8542|19|84, Monolithic integrated circuit not contained in a housing (chip), only for use in the manufacture of goods of subheading 8542|19|22 to 8542|19|62, 8542|19|71, 8542|19|82 or 8542|19|84, Amplifier, in the form of a monolitic integrated analogue circuit not contained in a housing (chip), for use in the manufacture of products falling within subheading 9021 40 00, Amplifier of bipolar technology, for the amplification of read/write signals of thin film magnetic heads, in the form of a monolithic integrated analogue circuit not contained in a housing (chip), for use in the manufacture of disc storage units, FM receiver/amplifier of bipolar technology, in the form of a monolithic integrated ananlogue circuit not contained in a housing (chip), for use in the manufacture of products falling within subheading 9021 40 00, Electrically erasable programmable, read only memories (E$2PROMs), including FLASH E$2PROMs, Read only memories, non-programmable (ROMs); content addressable memories (CAMs); first in/first out read/write memories (FIFOs); last-in/first-out read/write memories (LIFOs); ferroelectric memories, Microprocessors and microcontrollers (including microcomputers), Electrically erasable, programmable, read only memories (E$2PROMs), including flash E$2PROMs, Wafer, not yet cut into chips, consisting only of amplifiers, for use in the manufacture of goods of heading or subheading 8471, 8542|30|20, 8542|30|30, 8542|40|50, 8543|89|90 or 9021|40|00, Amplifier, in the form of a monolithic integrated analogue circuit not contained in a housing (chip), for use in the manufacture of products falling within subheading 9021|40| 00, FM receiver/amplifier of bipolar technology, in the form of an monolithic integrated analogue circuit not contained in a housing (chip), for use in the manufacture of products falling within subheading 9021|40|00, Amplifier, not contained in a housing (chip), for use in the manufacture of goods of heading or subheading 8471, 8542|30|30, 8542|40|50, 8543|89|90 or 9021|40|00, Voltage regulator, in the form of a monolithic integrated analogue circuit contained in a housing bearing:- an identification marking consisting of or including (one of) the following combination(s):0|C|(RH5|RA|30|AA) 16227090 1|B|(RH5|RA|21|AA)34992 CS|8109|(7032FB) CS|8140 CS|8141 EZ|1083 EZ|1084 EZ|1085 EZ|1086 LM|1575 LM|2575 LM|2940 LP|2950 LP|2951 LP|2980 LT|1020 LT|1070 LT|1071 LT|1074 LT|1076 LT|1083 LT|1084 LT|1085 LT|1120 LT|1129 LT|1142 LT|1149 LT|1170 LT|1171 LT|1172 LT|1271 LT|1431 LT|1510 LT|1511 LT|1512 LT|1585 MIC|2951 MAX|717 MAX|718 MAX|719 MAX|720 MAX|721 MAX|722 MAX|723 MAX|732 MAX|733 MIC|5200 MIC|5201 MIC|5205 PQ05RH1 PQ12RH1 S|8420 S|8850 SCI|7710Y-KA TK|112 TK|113 TK|11430M TK|11440M TK|114|(R3) TK|115 TK|116 TK|71350M TL750M TL751M or- other identification markings relating to devices complying with the abovementioned description, Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits, Goods specified in note 8(b)(3) to this chapter, DRAMs (dynamic random access memories), manufactured using variations of metal oxide-semiconductors (MOS) process technology, including complementary MOS types (CMOS), With a storage capacity not exceeding 512 Mbits, With a storage capacity exceeding 512 Mbits, Electrically erasable, programmable, read only memories (EPROMs), including flash EPROMs, Microprocessors, microcontrollers and microcomputers, Silicon power bridge rectifier, with reverse voltage not exceeding 800 V and an average forward current of 1 A or more but not exceeding 4 A, in the form of a microassembly contained in a housing, Dual silicon zener diode, with a zener voltage of 11 V or more but not exceeding 13 V and a dissipation rate not exceeding 200 mW, in the form of a microassembly contained in a housing, Silicon power bridge rectifier, with reverse voltage not exceeding 800 V and an average forward current of 1 A, in the form of a microassembly contained in a housing, Silicon diode assembly, comprising a diode with a reverse recovery time not exceeding 1,5 ?s, a recurrent peak reverse voltage not exceeding 1500 V and an average forward current not exceeding 5 A, in the form of a microassembly contained in a housing, Integrated circuit housing, consisting of a multilayer ceramic substrate with metallic contacts for chips, the dimensions of which do not exceed 47|!x!|47|mm and with not more than 120 connections, Electrical machines and apparatus, having individual functions, not specified or included elsewhere in this chapter, Electron beam accelerator systems, with an operating voltage not exceeding 1,5 MV and a beam current not exceeding 70 mA, Ion implanters for doping semiconductors wafers, Ion implanters for doping semiconductor materials, Machines and apparatus for electroplating, electrolysis or electrophoresis, Apparatus for wet etching, developing, stripping or cleaning semiconductor wafers, Apparatus for wet etching, developing, stripping or cleaning semiconductor wafers or flat panel display substrates, Apparatus for wet etching, developing, stripping or cleaning liquid crystal display substrates, Electrical machines with translation or dictionary functions, Sunbeds, sunlamps and similar suntanning equipment, For fluorescent tubes using ultraviolet A rays, Flight recorders, electric synchros and transducers, defrosters and demisters with electric resistors, for use in civil aircraft, Base station or camera control unit (CCU) connected to the camera by a cable, Amplifier, consisting of active and passive elements mounted on a printed circuit, contained in a housing, Radio frequency (RF) modulator, operating with a frequency range of 43 MHz or more but not exceeding 870 MHz, capable of switching VHF and UHF signals, consisting of active and passive elements mounted on a printed circuit, contained in a housing, Rectifier assembly of power barrier diodes, consisting of 2 diodes with an average forward current not exceeding 600 A and a repetitive reverse peak voltage not exceeding 40 V, each contained in a housing and connected by a common cathode, Piezo-electric crystal oscillator with a fixed frequency, within a frequency range of 1,8 MHz to 67 MHz, contained in a housing, Mechanical vibratory gyroscope driven by a 25 or 26 kHz oscillator, comprising a differential amplifier and a detector circuit, contained in a housing, Oscillator, with a centre frequency of 20 GHz or more but not exceeding 42 GHz, consisting of active and passive elements not mounted on a substrate, contained in a housing, Voltage controlled frequency generator, consisting of active and passiveelements mounted on a printed circuit, contained in a housing with dimensions of not more than 30 x 30 mm, Audio recording and reproducing circuit, capable of stereo audio data storage and simultaneous record and playback, comprising 2 or 3 monolithic integrated circuits mounted on a printed circuit or a lead frame, contained in a housing, Charged coupled device (CCD) scanner assembly, for a real-time film scanning system, having optical functions, illumination functions and signal processing functions, Temperature compensated oscillator, comprising a printed circuit on which are mounted at least a piezo-electric crystal and an adjustable capacitor, contained in a housing, Voltage controlled oscillator (VCO), other than temperature compensated oscillators, consisting of active and passive elements mounted on a printed circuit, contained in a housing, Fuel cell module containing at least polymer electrolyte membrane fuel cells in a housing with an integrated cooling system, for use in the manufacture of motor vehicle propulsion systems, Flight recorders, for use in civil aircraft, Sunbeds, sunlamps ans similar suntanning equipment, Apparatus for physical deposition by sputtering on semiconductor wafers, Modulators for the range from|0,5|MHz to|5|MHz, contained in a housing the external dimensions of which do not exceed|48|!x!|74|mm, Modulators for the range from|0,5|to|5|MHz, contained in a housing the external dimensions of which do not exceed|74|!x!|48|mm, Apparatus for physical deposition on semiconductor wafers, Encapsulation equipment for assembly of semiconductor devices, Apparatus for physical deposition by sputtering or LCD substrates. We assume that the computer, screen, keyboard, and connections depicted will be in one shipment. Seeks to amend notification No. !1!b)|MHW|803!1!

Bus interface circuit of C-MOS technology, for synchronous/asynchronous data transfer between a microprocessor and control circuits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 31|!x!|31|mm, with not more than 84|connecting pins or contact areas and bearing:!1!- an identification marking consisting of or including one of the following combinations of figures and letters:!1!ESP|216!1!ESP|226!1!AIC|6250!1!or!1!- other identification markings relating to devices complying with the abovementioned description, 1. No sample was received, but the flyer describes a typical use as follows: !1!k)|MHW|820-1!1! 80C188||||||||DSP 56200||||||XSP 56200!1! ETCN promises to collect and edit them in due care but shall not be liable for their correction and accuracy. Non-volatile memory consisting of a static random-access memory of C-MOS technology (C-MOS S-RAM), with a storage capacity of 64 Kbits and an internal energy source, in the form of a monolithic integrated circuit, Static random-access memory (S-RAMs) of MOS technology, with a storage capacity of 1|K|!x!|4|bits and an access time not exceeding, Random-access memory of ECL technology (ECL-RAM) with a storage capacity of 64|Kbits in the form of a monolithic integrated circuit, contained in a housing the dimensions of which do not exceed 10|!x!|32|mm, with not more than 24, Static random-access memory (S-RAM) with a storage capacity of 256|bits superimposed bit-for-bit on an electrically erasable, abovementioned description. Seeks to amend notification No. Non-erasable, user programmable logic device of ECL technology, having registers and a programmable AND array, with not more than|16|inputs and not more than|8|outputs, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed|13|!x!|33|mm, with not more than|28|connecting pins and bearing :!1!- an identification marking consisting of or including one of the following combinations of figures and letters :!1!CY10E301 CY10E302 CY100E301 CY100E302!1!or!1!- other identification markings relating to devices complying with the abovementioned description!1!2. 150a hr hardness tester rockwell hrm china

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